IXTH3N200P3HV
IXTH3N200P3HV
IXTH3N200P3HV
IXTH3N200P3HV
  • Transistors - FETs, MOSFETs - Single IXTH3N200P3HV
  • Transistors - FETs, MOSFETs - Single IXTH3N200P3HV
  • Transistors - FETs, MOSFETs - Single IXTH3N200P3HV
  • Transistors - FETs, MOSFETs - Single IXTH3N200P3HV
IXTH3N200P3HV
Категория
Transistors - FETs, MOSFETs - Single
Производитель
IXYS / Littelfuse
RoHS
YES
Certification
Доставка
Оплата

{{title}}
{{description}}
{{ isClicked ? 'Представлено' : 'Отправить' }}
Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:IXTH3N200P3HV
Description:MOSFET N-CH 2000V 3A TO-247
Lead Free Status / RoHS Status:
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Supplier Device PackageTO-247
PackagingTube
Manufacturer Standard Lead Time24 Weeks
Vgs (Max)±20V
Moisture Sensitivity Level (MSL)1 (Unlimited)
Meta Part NumberIXTH3N200P3HV-ND
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Power Dissipation (Max)520W (Tc)
FET TypeN-Channel
FET Feature-
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1860pF @ 25V
Drain to Source Voltage (Vdss)2000V
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Rds On (Max) @ Id, Vgs8 Ohm @ 1.5A, 10V
Detailed DescriptionN-Channel 2000V 3A (Tc) 520W (Tc) Through Hole TO-247
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id5V @ 250µA
Series-

Таблицы данных: Work in prgress, stay tuned!

Соответствующая продукция
Close