HYG009N04LS1C2
HYG009N04LS1C2
HYG009N04LS1C2
HYG009N04LS1C2
  • Transistors - FETs, MOSFETs - Single HYG009N04LS1C2
  • Transistors - FETs, MOSFETs - Single HYG009N04LS1C2
  • Transistors - FETs, MOSFETs - Single HYG009N04LS1C2
  • Transistors - FETs, MOSFETs - Single HYG009N04LS1C2
HYG009N04LS1C2
Категория
Transistors - FETs, MOSFETs - Single
Производитель
HUAYI
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
ModelHYG009N04LS1C2
ManufacturerHUAYI
PackageDFN-8(5.1x5.8)
Drain to Source Voltage40V
Current - Continuous Drain(Id)200A
Operating Temperature-55℃~+175℃
TypeN-Channel
RDS(on)1.4mΩ@4.5V
Pd - Power Dissipation75W
Gate Threshold Voltage (Vgs(th))3V@250uA
Reverse Transfer Capacitance (Crss@Vds)58pF
Number1 N-Channel
Input Capacitance(Ciss)5.876nF
Gate Charge(Qg)89nC@10V
Output Capacitance(Coss)1278pF

Таблицы данных: Work in prgress, stay tuned!

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