RN1102MFV,L3F
RN1102MFV,L3F
RN1102MFV,L3F
RN1102MFV,L3F
  • Transistors - Bipolar (BJT) - Single, Pre-Biased RN1102MFV,L3F
  • Transistors - Bipolar (BJT) - Single, Pre-Biased RN1102MFV,L3F
  • Transistors - Bipolar (BJT) - Single, Pre-Biased RN1102MFV,L3F
  • Transistors - Bipolar (BJT) - Single, Pre-Biased RN1102MFV,L3F
RN1102MFV,L3F
Категория
Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:RN1102MFV,L3F
Description:TRANS PREBIAS NPN 50V 0.15W VESM
Lead Free Status / RoHS Status:
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector Cutoff (Max)500nA
Meta Part NumberRN1102MFVL3FCT-ND
Current - Collector (Ic) (Max)100mA
Power - Max150mW
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Other NamesRN1102MFV(TL3T)CT
RN1102MFV(TL3T)CT-ND
RN1102MFVL3F(BCT
RN1102MFVL3F(BCT-ND
RN1102MFVL3FCT
Resistor - Base (R1)10 kOhms
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Series-
Manufacturer Standard Lead Time16 Weeks
Package / CaseSOT-723
Supplier Device PackageVESM
Transistor TypeNPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Resistor - Emitter Base (R2)10 kOhms
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Mounting TypeSurface Mount
PackagingCut Tape (CT)
Moisture Sensitivity Level (MSL)1 (Unlimited)

Таблицы данных: Work in prgress, stay tuned!

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