NSBC113EF3T5G
NSBC113EF3T5G
NSBC113EF3T5G
NSBC113EF3T5G
  • Transistors - Bipolar (BJT) - Single, Pre-Biased NSBC113EF3T5G
  • Transistors - Bipolar (BJT) - Single, Pre-Biased NSBC113EF3T5G
  • Transistors - Bipolar (BJT) - Single, Pre-Biased NSBC113EF3T5G
  • Transistors - Bipolar (BJT) - Single, Pre-Biased NSBC113EF3T5G
NSBC113EF3T5G
Категория
Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель
AMI Semiconductor/onsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:NSBC113EF3T5G
Description:TRANS PREBIAS DUAL NPN
Lead Free Status / RoHS Status:
Mounting TypeSurface Mount
Resistor - Emitter Base (R2)1 kOhms
Meta Part NumberNSBC113EF3T5G-ND
Series-
Package / CaseSOT-1123
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Manufacturer Standard Lead Time6 Weeks
Resistor - Base (R1)1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA, 10V
Supplier Device PackageSOT-1123
Current - Collector (Ic) (Max)100mA
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
PackagingTape & Reel (TR)
Current - Collector Cutoff (Max)500nA
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 254mW Surface Mount SOT-1123
Power - Max254mW
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA

Таблицы данных: Work in prgress, stay tuned!

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