NSBC123JPDXV6T1G
NSBC123JPDXV6T1G
NSBC123JPDXV6T1G
NSBC123JPDXV6T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased NSBC123JPDXV6T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased NSBC123JPDXV6T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased NSBC123JPDXV6T1G
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased NSBC123JPDXV6T1G
NSBC123JPDXV6T1G
Категория
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель
AMI Semiconductor/onsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:NSBC123JPDXV6T1G
Description:TRANS PREBIAS NPN/PNP SOT563
Lead Free Status / RoHS Status:
Manufacturer Standard Lead Time4 Weeks
Supplier Device PackageSOT-563
Power - Max500mW
Frequency - Transition-
Other NamesNSBC123JPDXV6T1GOS
NSBC123JPDXV6T1GOS-ND
NSBC123JPDXV6T1GOSTR
Base Part NumberNSBC1*
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max)50V
Mounting TypeSurface Mount
Resistor - Emitter Base (R2)47 kOhms
Meta Part NumberNSBC123JPDXV6T1GOSTR-ND
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Series-
Resistor - Base (R1)2.2 kOhms
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Current - Collector (Ic) (Max)100mA

Таблицы данных: Work in prgress, stay tuned!

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