SI4816BDY-T1-GE3
SI4816BDY-T1-GE3
SI4816BDY-T1-GE3
  • Transistors - FETs, MOSFETs - Arrays SI4816BDY-T1-GE3
  • Transistors - FETs, MOSFETs - Arrays SI4816BDY-T1-GE3
  • Transistors - FETs, MOSFETs - Arrays SI4816BDY-T1-GE3
SI4816BDY-T1-GE3
Категория
Transistors - FETs, MOSFETs - Arrays
Производитель
Electro-Films (EFI) / Vishay
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:SI4816BDY-T1-GE3
Description:MOSFET 2N-CH 30V 5.8A 8-SOIC
Lead Free Status / RoHS Status:
Drain to Source Voltage (Vdss)30V
FET Type2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C5.8A, 8.2A
Vgs(th) (Max) @ Id3V @ 250µA
Power - Max1W, 1.25W
PackagingTape & Reel (TR)
Supplier Device Package8-SO
SeriesLITTLE FOOT®
Moisture Sensitivity Level (MSL)1 (Unlimited)
Mounting TypeSurface Mount
Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SO
Other NamesSI4816BDY-T1-GE3TR
SI4816BDYT1GE3
Meta Part NumberSI4816BDY-T1-GE3TR-ND
FET FeatureLogic Level Gate
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Base Part NumberSI4816
Gate Charge (Qg) (Max) @ Vgs10nC @ 5V
Rds On (Max) @ Id, Vgs18.5 mOhm @ 6.8A, 10V
Package / Case8-SOIC (0.154, 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds-
Operating Temperature-55°C ~ 150°C (TJ)

Таблицы данных: Work in prgress, stay tuned!

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