RN2910FE,LF(CB
RN2910FE,LF(CB
RN2910FE,LF(CB
RN2910FE,LF(CB
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN2910FE,LF(CB
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN2910FE,LF(CB
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN2910FE,LF(CB
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN2910FE,LF(CB
RN2910FE,LF(CB
Категория
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Производитель
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:RN2910FE,LF(CB
Description:TRANS 2PNP PREBIAS 0.1W ES6
Lead Free Status / RoHS Status:
Frequency - Transition200MHz
Moisture Sensitivity Level (MSL)1 (Unlimited)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
PackagingCut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Power - Max100mW
Mounting TypeSurface Mount
Series-
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Resistor - Base (R1)4.7 kOhms
Package / CaseSOT-563, SOT-666
Transistor Type2 PNP - Pre-Biased (Dual)
Resistor - Emitter Base (R2)-
Current - Collector Cutoff (Max)100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Supplier Device PackageES6
Other NamesRN2910FE(T5LFT)CT
RN2910FE(T5LFT)CT-ND
RN2910FELF(CBCT
RN2910FELF(CTCT
RN2910FELF(CTCT-ND
Meta Part NumberRN2910FELF(CBCT-ND

Таблицы данных: Work in prgress, stay tuned!

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