MT29F16G08ABABAM62B3WC1
MT29F16G08ABABAM62B3WC1
MT29F16G08ABABAM62B3WC1
MT29F16G08ABABAM62B3WC1
  • Memory MT29F16G08ABABAM62B3WC1
  • Memory MT29F16G08ABABAM62B3WC1
  • Memory MT29F16G08ABABAM62B3WC1
  • Memory MT29F16G08ABABAM62B3WC1
MT29F16G08ABABAM62B3WC1
Категория
Memory
Производитель
Micron Technology
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:MT29F16G08ABABAM62B3WC1
Description:IC FLASH 16G PARALLEL DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Memory Size16Gb (2G x 8)
Meta Part NumberMT29F16G08ABABAM62B3WC1-ND
Mounting TypeSurface Mount
Operating Temperature0°C ~ 70°C (TA)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
Detailed DescriptionFLASH - NAND Memory IC 16Gb (2G x 8) Parallel Die
TechnologyFLASH - NAND
Write Cycle Time - Word, Page-
PackagingBulk
Voltage - Supply2.7 V ~ 3.6 V
Memory FormatFLASH
Series-
Package / CaseDie
Supplier Device PackageDie
Memory TypeNon-Volatile
Memory InterfaceParallel

Таблицы данных: Work in prgress, stay tuned!

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