MRF5812GR1
MRF5812GR1
MRF5812GR1
MRF5812GR1
  • Transistors - Bipolar (BJT) - RF MRF5812GR1
  • Transistors - Bipolar (BJT) - RF MRF5812GR1
  • Transistors - Bipolar (BJT) - RF MRF5812GR1
  • Transistors - Bipolar (BJT) - RF MRF5812GR1
MRF5812GR1
Категория
Transistors - Bipolar (BJT) - RF
Производитель
Microsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number MRF5812GR1
Manufacturer Microsemi
Description TRANS NPN 15V 200MA 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 15V
Transistor Type NPN
Supplier Device Package 8-SO
Series -
Power - Max 1.25W
Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.154", 3.90mm Widtd)
Otder Names MRF5812GR1MITR
MRF5812GR1MITR-ND
MRF5812GR1TR
Operating Temperature -
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gain 13dB ~ 15.5dB
Frequency - Transition 5GHz
Detailed Description RF Transistor NPN 15V 200mA 5GHz 1.25W Surface Mount 8-SO
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V
Current - Collector (Ic) (Max) 200mA
Base Part Number MRF5812

Таблицы данных: Work in prgress, stay tuned!

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