MMBTH10-4LT1G
MMBTH10-4LT1G
MMBTH10-4LT1G
MMBTH10-4LT1G
  • Transistors - Bipolar (BJT) - RF MMBTH10-4LT1G
  • Transistors - Bipolar (BJT) - RF MMBTH10-4LT1G
  • Transistors - Bipolar (BJT) - RF MMBTH10-4LT1G
  • Transistors - Bipolar (BJT) - RF MMBTH10-4LT1G
MMBTH10-4LT1G
Категория
Transistors - Bipolar (BJT) - RF
Производитель
AMI Semiconductor/onsemi
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:MMBTH10-4LT1G
Description:TRANS VHF/UHF NPN 25V SOT-23
Lead Free Status / RoHS Status:
Supplier Device PackageSOT-23-3 (TO-236)
Operating Temperature-55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Other NamesMMBTH10-4LT1GOSCT
Voltage - Collector Emitter Breakdown (Max)25V
Gain-
PackagingCut Tape (CT)
Detailed DescriptionRF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236)
Frequency - Transition800MHz
Mounting TypeSurface Mount
Noise Figure (dB Typ @ f)-
Package / CaseTO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 4mA, 10V
Current - Collector (Ic) (Max)-
Meta Part NumberMMBTH10-4LT1GOSCT-ND
Series-
Transistor TypeNPN
Manufacturer Standard Lead Time4 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Base Part NumberMMBTH10
Power - Max225mW

Таблицы данных: Work in prgress, stay tuned!

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