MMBT5550LT3G
MMBT5550LT3G
MMBT5550LT3G
MMBT5550LT3G
  • Transistors - Bipolar (BJT) - Single MMBT5550LT3G
  • Transistors - Bipolar (BJT) - Single MMBT5550LT3G
  • Transistors - Bipolar (BJT) - Single MMBT5550LT3G
  • Transistors - Bipolar (BJT) - Single MMBT5550LT3G
MMBT5550LT3G
Категория
Transistors - Bipolar (BJT) - Single
Производитель
AMI Semiconductor/onsemi
RoHS
YES
Certification
Доставка
Оплата

{{title}}
{{description}}
{{ isClicked ? 'Представлено' : 'Отправить' }}
Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:MMBT5550LT3G
Description:TRANS NPN 140V 0.6A SOT-23
Lead Free Status / RoHS Status:
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL)1 (Unlimited)
Current - Collector Cutoff (Max)100nA
Frequency - Transition-
Current - Collector (Ic) (Max)600mA
Power - Max225mW
Manufacturer Standard Lead Time36 Weeks
Other NamesMMBT5550LT3GOSDKR
PackagingDigi-Reel®
Transistor TypeNPN
Mounting TypeSurface Mount
Series-
Voltage - Collector Emitter Breakdown (Max)140V
Meta Part NumberMMBT5550LT3GOSDKR-ND
Lead Free Status / RoHS StatusLead free / RoHS Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Detailed DescriptionBipolar (BJT) Transistor NPN 140V 600mA 225mW Surface Mount SOT-23-3 (TO-236)
Operating Temperature-55°C ~ 150°C (TJ)

Таблицы данных: Work in prgress, stay tuned!

Соответствующая продукция
Close