IDT71V416YS10Y8
IDT71V416YS10Y8
IDT71V416YS10Y8
IDT71V416YS10Y8
  • Memory IDT71V416YS10Y8
  • Memory IDT71V416YS10Y8
  • Memory IDT71V416YS10Y8
  • Memory IDT71V416YS10Y8
IDT71V416YS10Y8
Категория
Memory
Производитель
IDT (Renesas Electronics Corporation)
RoHS
YES
Certification
Доставка
Оплата

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Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:IDT71V416YS10Y8
Description:IC SRAM 4M PARALLEL 44SOJ
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Write Cycle Time - Word, Page10ns
Access Time10ns
PackagingTape & Reel (TR)
Voltage - Supply3 V ~ 3.6 V
Memory Size4Mb (256K x 16)
Memory TypeVolatile
Meta Part NumberIDT71V416YS10Y8-ND
Moisture Sensitivity Level (MSL)3 (168 Hours)
Mounting TypeSurface Mount
Supplier Device Package44-SOJ
Operating Temperature0°C ~ 70°C (TA)
Other Names71V416YS10Y8
Memory InterfaceParallel
Base Part NumberIDT71V416
TechnologySRAM - Asynchronous
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Series-
Memory FormatSRAM
Package / Case44-BSOJ (0.400, 10.16mm Width)
Detailed DescriptionSRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-SOJ

Таблицы данных: Work in prgress, stay tuned!

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