FII30-12E
FII30-12E
FII30-12E
  • Transistors - IGBTs - Arrays FII30-12E
  • Transistors - IGBTs - Arrays FII30-12E
  • Transistors - IGBTs - Arrays FII30-12E
FII30-12E
Категория
Transistors - IGBTs - Arrays
Производитель
IXYS / Littelfuse
RoHS
YES
Certification
Доставка
Оплата

{{title}}
{{description}}
{{ isClicked ? 'Представлено' : 'Отправить' }}
Технические характеристики
Таблицы данных
TYPEDESCRIPTION
Part Number:FII30-12E
Description:IGBT PHASE TOP ISOPLUS I4-PAC-5
Lead Free Status / RoHS Status:
Detailed DescriptionIGBT Array NPT Half Bridge 1200V 33A 150W Through Hole ISOPLUS i4-PAC™
Mounting TypeThrough Hole
Power - Max150W
Package / Casei4-Pac™-5
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)33A
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Supplier Device PackageISOPLUS i4-PAC™
InputStandard
Series-
Moisture Sensitivity Level (MSL)1 (Unlimited)
Meta Part NumberFII30-12E-ND
ConfigurationHalf Bridge
Operating Temperature-55°C ~ 150°C (TJ)
IGBT TypeNPT
NTC ThermistorNo
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 20A
Current - Collector Cutoff (Max)200µA
Input Capacitance (Cies) @ Vce1.2nF @ 25V

Таблицы данных: Work in prgress, stay tuned!

Соответствующая продукция
Close